Samsung 860 EVO 500GB SATA 3 M. 2 SSD Hard Disk

Samsung 860 EVO 500GB SATA 3 M. 2 Duro SSD

We introduce you to the new version of the sales-selling SATA SSD, the Samsung 860 EVO. The new SSD features the Samsung V-NAND Samsung and a robust algorithm-based controller, and is available in different formats and capabilities.

Enjoy constant speed even with large workloads and multitasking. Samsung's 860 EVO SSD drive provides a sequential write speed of up to 520 MB/s thanks to the Intelligent TurboWrite íg technology, and a sequential write rate of up to 550 MB/s. The Tama ñ or the TurboWrite buffer has been improved from 12 GB to 78 GB, offering you a file transfer m &aecas r &arecute;

Stores securely and seamlessly renders and renders 3D data used by the latest applications, up to 8 times the TBW (Terabytes written) * model that the previous model 850 EVO. The latest technology í a V-NAND provides a reliability of the market with 5 to ñ s of garant í to or 2,400 TBW.

Benef &iacciate de una comunicaci &oatuten m áres r áres pípida y fluido con tu equipo. The new ECC* algorithm and its MJX driver generate high speed m &aecups, while its enhanced TRIM ó tail favors its compatibility with Linux. Our advanced engineer íos a har &aetuos our SSD 860 EVO m &aUteres compatible with your operating system.

Whatever the tama ñ or your computer, there will always be an 860 EVO SSD for you. Choose from the 2.5 ” model for your PC or port &atil, or the SATA M. 2 (2280) and mSATA for ultra-thin equipment. As simple.

Samsung 860 EVO Specifications:

• Capacity: 500 GB
• Format: M. 2 2280
• Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s
• Dimensions: M &aacuties x 80.15 x M &aacuties x 22.15 x Max.2.38 (mm)
• Weight: M &aacuties x. 8g
• NAND Type
• Samsung V-NAND 3bit MLC
• Controller: Samsung MJX Controller
• Cach Memory: Samsung 512 MB Low Power DDR4 SDRAM
• Special &iacitises Character
  • TRIM Support
  • TRIM
  • S. M. A. R. T Support
  • S. M. A. R. T
  • GC (Garbage Collection)
  • Auto Garbage Collection Algorithm
  • AES 256-bit
  • Device Support Mode: S &iactos
  • Performance
    • Sequential reading: Up to 550 MB/s
    • Random Read (4KB, QD32): Up to 97,000 IOPS
    • Random Write (4KB, QD32): Up to 88,000 IOPS
    • Random Read (4KB, QD1): Up to 10,000 IOPS
    • Random Write (4KB, QD1): Up to 42,000 IOPS
• Environment
  • Energ Consumption &iute; s to: 4.0 W
  • Durability (MTBF): 1.5 Million hours
  • Temperature: 0-70 ° C
  • Golpes: 1,500 G & 0.5

• Magician