Samsung 860 EVO 250GB 2.5 '' SATA 3 SSD Hard Disk

Samsung 860 EVO 250GB 2.5 ' '

We present you with the new version of the SATA SSD l &iuterer sales, the Samsung 860 EVO. The new SSD features the Samsung V-NAND Samsung and a robust algorithm-based controller, and is available in different formats and capabilities.

Enjoy constant speed even with large workloads and multitasking. Samsung's SSD 860 EVO drive provides a sequential write speed of up to 520 MB/s thanks to the Intelligent TurboWrite íg technology, and a sequential write rate of up to 550 MB/s. The Tama ñ or the TurboWrite buffer has been improved from 12 GB to 78 GB, offering you a file transfer m &aecas r &arecute;

Securely stores and seamlessly renders and renders 3D data used by the latest applications, up to 8 times the TBW (Terabytes Written)     that the previous model 850 EVO. The latest technology í a V-NAND provides a reliability of the market with 5 to ñ s of garant í to or 2,400 TBW.

Benef &iacciate de una comunicaci &oatuten m áres r áres pípida y fluido con tu equipo. The new ECC   algorithm and its MJX driver generate high speed m &aasties, while its enhanced TRIM ó queue favors its compatibility with Linux. Our advanced engineer íos a har &aetuos our SSD 860 EVO m &aUteres compatible with your operating system.

Whatever the tama ñ or your computer, there will always be a SSD 860 EVO for you. Choose from the 2.5 ” model for your PC or port &atil, or the SATA M. 2 (2280) and mSATA for ultra-thin equipment. As simple.

Samsung 860 EVO Specifications:

• Series: SSD 860 EVO
• Interface: SATA 6 Gb/s interface, compatible with SATA 3 Gb/s interface and SATA 1.5 Gb/s
• Capacity: 250 GB *Actual usable capacity may be lower (due to formatting, partitions, operating system, applications, or others)
• Sequential read rate: Sequential reading up to 550 MB/s
  • * Performance can vary sec &uendon of
  • Sequential write speed: Up to 520 MB/s sequential write
    • * Performance may vary sec&uastin the system hardware and
    • Random read rate: Random read (4 KB, QD32): up to 98 000 random read random reads of IOPS (4 KB, QD1): up to 10,000 random read IOPS
      • * Performance can vary sec &uendon system hardware and
      • Random write speed: Random write (4KB, QD32): up to 90,000 random write random IOPS (4KB, QD1): up to 42,000 random write IOPS
        • * Performance
        • System hardware and
    MJX Controller
    • NAND Flash: Samsung V-NAND 3bit MLC
    • Cach Memory &eachoes: Samsung 512 MB low power DDR4 SDRAM
    • Trim Support: S &iactos
    • Encryptaci 256-bit AES (Class 0) TCG/Opal IEEE1667 (encrypted unit)
    • Reliability (MTBF): 1.5 million hours of reliability (MTBF)